Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters-Reference-Cited by-同舟云学术

Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters

Published:2019-07-08 Issue:7 Volume:13 Page:8047-8054
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Seifner Michael S.¹^ORCID,Dijkstra Alain²,Bernardi Johannes³^ORCID,Steiger-Thirsfeld Andreas³,Sistani Masiar⁴^ORCID,Lugstein Alois⁴^ORCID,Haverkort Jos E. M.²^ORCID,Barth Sven¹⁵^ORCID

Affiliation:

1. Institute of Materials Chemistry, TU Wien, Getreidemarkt 9/BC/02, A-1060 Vienna, Austria

2. Department of Applied Physics, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands

3. University Service Center for TEM (USTEM), TU Wien, Wiedner Hauptstraße 8-10, 1040 Vienna, Austria

4. Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria

5. Physikalisches Institut, Goethe-Universität Frankfurt, Max-von-Laue-Straße 1, 60438 Frankfurt am Main, Germany

Funder

Austrian Science Fund

Deutsche Forschungsgemeinschaft

Horizon 2020 Framework Programme

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b02843

Reference64 articles.

1. Group IV Photonics: Driving Integrated Optoelectronics

2. Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn

3. Process modules for GeSn nanoelectronics with high Sn-contents

4. Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics

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