Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics-Reference-Cited by-同舟云学术

Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics

Published:2017-01-17 Issue:3 Volume:42 Page:387
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Ghetmiri Seyed Amir,Zhou Yiyin,Margetis Joe,Al-Kabi Sattar,Dou Wei,Mosleh Aboozar,Du Wei,Kuchuk Andrian,Liu Jifeng,Sun Greg,Soref Richard A.,Tolle John,Naseem Hameed A.,Li Baohua,Mortazavi Mansour,Yu Shui-Qing

Funder

National Science Foundation (NSF)

Air Force Office of Scientific Research (AFOSR)

National Aeronautics and Space Administration (NASA)

Air Force Research Laboratory (AFRL)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference29 articles.

1. Mid-infrared photonics in silicon and germanium

2. Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser

3. Group IV Photonics: Driving Integrated Optoelectronics

4. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

5. Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Computation of the near-infrared electro-absorption in GeSn/SiGeSn step quantum wells;Micro and Nanostructures;2024-09

2. Probing semiconductor quantum well qubits and associated Shannon entropy using semi-relativistic quantum mechanics;Optical and Quantum Electronics;2023-08-07

3. SiGeSn buffer layer for the growth of GeSn films;Journal of Applied Physics;2023-07-12

4. Dramatic increase in SWIR detection for GeSn strip detector with graphene hybrid structure;Journal of Alloys and Compounds;2023-06

5. Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction;Applied Surface Science;2022-12