Enhanced Performance of Ge Photodiodes via Monolithic Antireflection Texturing and α-Ge Self-Passivation by Inverse Metal-Assisted Chemical Etching-Reference-Cited by-同舟云学术

Enhanced Performance of Ge Photodiodes via Monolithic Antireflection Texturing and α-Ge Self-Passivation by Inverse Metal-Assisted Chemical Etching

Published:2018-05-30 Issue:7 Volume:12 Page:6748-6755
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Kim Munho¹^ORCID,Yi Soongyu²,Kim Jeong Dong¹,Yin Xin³^ORCID,Li Jun³^ORCID,Bong Jihye²,Liu Dong²,Liu Shih-Chia⁴,Kvit Alexander⁵,Zhou Weidong⁴,Wang Xudong³^ORCID,Yu Zongfu²,Ma Zhenqiang²^ORCID,Li Xiuling¹

Affiliation:

1. Department of Electrical and Computer Engineering and Micro and Nanotechnology Laboratory, Materials Research Laboratory, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States,

2. Department of Electrical and Computer Engineering, University of Wisconsin at Madison, Madison, Wisconsin 53706, United States,

3. Department of Material and Science Engineering, University of Wisconsin at Madison, Madison, Wisconsin 53706, United States,

4. Department of Electrical Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States,

5. Materials Science Center, University of Wisconsin at Madison, Madison, Wisconsin 53706, United States

Funder

U.S. Department of Energy

National Science Foundation

Lam Research Corporation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.8b01848

Reference41 articles.

1. Light trapping properties of pyramidally textured surfaces

2. Light Trapping in Silicon Nanowire Solar Cells

3. Fundamental limit of nanophotonic light trapping in solar cells

4. An 18.2%-efficient black-silicon solar cell achieved through control of carrier recombination in nanostructures

5. Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction

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