Performance Improvement of Formamidinium‐Based Perovskite Photodetector by Solution‐Processed C8‐BTBT Modification

Author:

Huang Fobao1234ORCID,Ding Yiluo1,Liu Chunxiao1,Hu Gongwei5,Makarov Sergey67,Zhang Dongwei124,Wang Yucheng1,Huang Wei13

Affiliation:

1. School of Microelectronics Northwestern Polytechnical University Xi'an 710072 China

2. NPU Taicang Intelligence Hub Northwestern Polytechnical University Taicang 215400 China

3. Institute of Flexible Electronics Northwestern Polytechnical University Xi'an 710072 China

4. Yangtze River Delta Research Institute of NPU Northwestern Polytechnical University Taicang 215400 China

5. Hubei Engineering Research Center of Weak Magnetic‐field Detection College of Science China Three Gorges University Yichang 443002 China

6. The School of Physics and Engineering ITMO University St. Petersburg 197101 Russia

7. Qingdao Innovation and Development Center Harbin Engineering University Qingdao 266000 China

Abstract

AbstractOrganic–inorganic hybrid perovskite has attracted extensive research due to its excellent optoelectronic properties and is a competitive candidate material for a new generation of photodetectors. However, lateral structure photodetectors based only on perovskite active materials still present moderate performance and poor stability. Herein, lateral structure formamidinium‐based perovskite FA0.9Cs0.1PbI3 photodetectors are reported which are modified by a solution‐processed organic semiconductor 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT) layer for improved photosensitive performance and ambient/flexibility stability. High‐mobility organic semiconductor C8‐BTBT serves as an efficient hole transport layer that fills the grain boundaries and gaps of the FA0.9Cs0.1PbI3 film, enabling rapid extraction and transport of the photo‐generated carriers from the perovskite to the electrodes, resulting in enhanced photosensitive performance of the photodetector. Compared with the original device, the C8‐BTBT‐modified photodetector exhibits dramatically improved performance with a best responsivity of 1278 mA W−1, specific detectivity of 1.58 × 1012 Jones, external quantum efficiency of 298%, and fall time of 14.09 ms, which is 10.84 times less than 152.76 ms of the pure perovskite device. Moreover, the C8‐BTBT film acts as a protective layer for the FA0.9Cs0.1PbI3 film because of its good air stability and effective coverage, which significantly improves the ambient stability of the perovskite photodetector compared with the original device, increasing photocurrent retention from 2.5% to 61.5% or 81.5% at different humidity after 6 days. Furthermore, the C8‐BTBT‐modified perovskite photodetector exhibits outstanding flexibility performance, with only a 5% reduction in photocurrent under bending and almost no change after 200 bending cycles, while those of the pristine perovskite device have degraded to ≈80% and ≈75% under the same conditions, respectively. This study provides a facile and effective solution‐processed‐based strategy for constructing high‐performance and stable perovskite photodetectors.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Key Research and Development Projects of Shaanxi Province

Fundamental Research Funds for the Central Universities

Publisher

Wiley

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