High-Responsivity, High-Detectivity, Ultrafast Topological Insulator Bi2Se3/Silicon Heterostructure Broadband Photodetectors-Reference-Cited by-同舟云学术

High-Responsivity, High-Detectivity, Ultrafast Topological Insulator Bi2Se3/Silicon Heterostructure Broadband Photodetectors

Published:2016-05-02 Issue:5 Volume:10 Page:5113-5122
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Zhang Hongbin¹,Zhang Xiujuan¹,Liu Chang¹,Lee Shuit-Tong¹,Jie Jiansheng¹

Affiliation:

1. Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Jiangsu Province

Priority Academic Program Development of Jiangsu Higher Education Institutions

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b00272

Reference46 articles.