Lateral and Vertical Two-Dimensional Layered Topological Insulator Heterostructures-Reference-Cited by-同舟云学术

Lateral and Vertical Two-Dimensional Layered Topological Insulator Heterostructures

Published:2015-10-20 Issue:11 Volume:9 Page:10916-10921
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Li Yanbin,Zhang Jinsong,Zheng Guangyuan,Sun Yongming,Hong Seung Sae,Xiong Feng,Wang Shuang,Lee Hye Ryoung,Cui Yi¹

Affiliation:

1. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, United States

Funder

Defense Advanced Research Projects Agency

Agency for Science, Technology and Research

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b04068

Reference27 articles.

1. Van der Waals heterostructures

2. Graphene and boron nitride lateral heterostructures for atomically thin circuitry

3. Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges

4. In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes

5. Vertical and in-plane heterostructures from WS2/MoS2 monolayers

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