Enhanced Atomic Precision Fabrication by Adsorption of Phosphine into Engineered Dangling Bonds on H–Si Using STM and DFT-Reference-Cited by-同舟云学术

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Enhanced Atomic Precision Fabrication by Adsorption of Phosphine into Engineered Dangling Bonds on H–Si Using STM and DFT

Published:2022-11-01 Issue:11 Volume:16 Page:19114-19123
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Wyrick Jonathan¹^ORCID,Wang Xiqiao¹²,Namboodiri Pradeep¹,Kashid Ranjit Vilas¹,Fei Fan¹³,Fox Joseph¹³,Silver Richard¹

Affiliation:

1. Atom Scale Device Group, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States

2. Joint Quantum Institute, University of Maryland, College Park, Maryland 20740, United States

3. Department of Physics, University of Maryland, College Park, Maryland 20740, United States

Funder

National Institute of Standards and Technology

Office of Energy Efficiency and Renewable Energy

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c08162

Reference34 articles.

1. Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor

2. A single-atom transistor

3. Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices

4. Spin readout and addressability of phosphorus-donor clusters in silicon

5. A two-qubit gate between phosphorus donor electrons in silicon

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1. Atomic Precision Processing of Two-Dimensional Materials for Next-Generation Microelectronics;ACS Nano;2024-08-06

2. Surface-Assisted Selective Air Oxidation of Phosphines Adsorbed on Activated Carbon;Inorganic Chemistry;2024-05-09

3. Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication;Advanced Materials;2024-03-22

4. PBr3 adsorption on a chlorinated Si(100) surface with mono- and bivacancies;The Journal of Chemical Physics;2024-02-01

5. Superexchange coupling of donor qubits in silicon;Physical Review Applied;2024-01-22

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