Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition-Reference-Cited by-同舟云学术

Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition

Published:2015-07-24 Issue:9 Volume:9 Page:8710-8717
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Minaye Hashemi Fatemeh Sadat¹,Prasittichai Chaiya¹,Bent Stacey F.¹

Affiliation:

1. Department of Materials Science and Engineering and ‡Department of Chemical Engineering, Stanford University, Stanford, California 94305-5025, United States

Funder

Eastman Kodak Co.

Semiconductor Research Corporation

Intel Corporation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b03125

Reference41 articles.

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2. Lowrey, T. A.; Dennison, C. H.Utilizing Atomic Layer Deposition for Programmable Device. U.S. Patent No. 6511867, 2005.

3. Park, I.; Kim, Y.; Lee, S.; Kim, B.; Park, C.Integrated Circuit Devices Having Buffer Layers Therein Which Contain Metal Oxide Stabilized by Heat Treatment Under Low Temperature. U.S. Patent No. 6144060, 2000.

4. Selective-Area Atomic Layer Deposition Using Poly(methyl methacrylate) Films as Mask Layers

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