Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed-Reference-Cited by-同舟云学术

Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed

Published:2015-07-21 Issue:8 Volume:9 Page:8312-8320
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lee Hee Sung¹,Baik Seung Su²,Lee Kimoon³,Min Sung-Wook¹,Jeon Pyo Jin¹,Kim Jin Sung¹,Choi Kyujin¹,Choi Hyoung Joon²,Kim Jae Hoon¹,Im Seongil¹

Affiliation:

1. Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea

2. Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University, Seoul 120-749, Korea

3. Department of Physics, Kunsan National University, 558 daehak-ro, Gunsan, Jeonbuk 573-701, Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b02785

Reference53 articles.

1. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

2. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

3. Integrated Circuits and Logic Operations Based on Single-Layer MoS2

4. Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

5. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

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