Molecular-Scale Characterization of Photoinduced Charge Separation in Mixed-Dimensional InSe–Organic van der Waals Heterostructures-Reference-Cited by-同舟云学术

Molecular-Scale Characterization of Photoinduced Charge Separation in Mixed-Dimensional InSe–Organic van der Waals Heterostructures

Published:2020-02-20 Issue:3 Volume:14 Page:3509-3518
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Li Shaowei¹,Zhong Chengmei¹²^ORCID,Henning Alex¹^ORCID,Sangwan Vinod K.¹^ORCID,Zhou Qunfei³⁴^ORCID,Liu Xiaolong⁵^ORCID,Rahn Matthew S.¹,Wells Spencer A.¹,Park Hong Youl¹,Luxa Jan⁶,Sofer Zdeněk⁶^ORCID,Facchetti Antonio²^ORCID,Darancet Pierre³⁴^ORCID,Marks Tobin J.²^ORCID,Lauhon Lincoln J.¹^ORCID,Weiss Emily A.²^ORCID,Hersam Mark C.¹²⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States

2. Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States

3. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States

4. Northwestern Argonne Institute for Science and Engineering, Evanston, Illinois 60208, United States

5. Applied Physics Graduate Program, Northwestern University, Evanston, Illinois 60208-3113, United States

6. Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic

Funder

European Regional Development Fund

Deutsche Forschungsgemeinschaft

Grantov? Agentura Cesk? Republiky

Division of Materials Research

Neuron Foundation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b09661

Reference67 articles.

1. Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

2. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

3. Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal

4. Electron scattering mechanisms inn-type indium selenide

5. Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface

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