Electron-Injection and Atomic-Interface Engineering toward Stabilized Defected 1T-Rich MoS<sub>2</sub> as High Rate Anode for Sodium Storage-Reference-Cited by-同舟云学术

Electron-Injection and Atomic-Interface Engineering toward Stabilized Defected 1T-Rich MoS₂ as High Rate Anode for Sodium Storage

Published:2022-08-11 Issue:8 Volume:16 Page:12425-12436
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Sun Junwei¹,Zhang Zhihua²,Lian Gang¹^ORCID,Li Yangyang²^ORCID,Jing Laiying³,Zhao Mingwen²^ORCID,Cui Deliang¹,Wang Qilong⁴,Yu Haohai¹^ORCID,Wong Ching-Ping⁵^ORCID

Affiliation:

1. State Key Lab of Crystal Materials, Shandong University, Jinan 250100, P.R. China

2. School of Physics, Shandong University, Jinan 250100, P.R. China

3. School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, P.R. China

4. Key Laboratory for Special Functional Aggregated Materials of Education Ministry, School of Chemistry & Chemical Engineering, Shandong University, Jinan 250100, P.R. China

5. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

Funder

Ministry of Science and Technology of the People's Republic of China

Shandong University

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c03623