Wide-Range Controllable n-Doping of Molybdenum Disulfide (MoS2) through Thermal and Optical Activation-Reference-Cited by-同舟云学术

Wide-Range Controllable n-Doping of Molybdenum Disulfide (MoS2) through Thermal and Optical Activation

Published:2015-02-18 Issue:3 Volume:9 Page:2368-2376
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Park Hyung-Youl¹,Lim Myung-Hoon¹,Jeon Jeaho²,Yoo Gwangwe¹,Kang Dong-Ho¹,Jang Sung Kyu²,Jeon Min Hwan²,Lee Youngbin²,Cho Jeong Ho²,Yeom Geun Young²,Jung Woo-Shik³,Lee Jaeho⁴,Park Seongjun⁴,Lee Sungjoo²⁵,Park Jin-Hong¹

Affiliation:

1. Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea

2. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea

3. Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States

4. Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin 446-712, Korea

5. Center for Human Interface Nanotechnology (HINT), Suwon 440-746, Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b00153

Reference27 articles.

1. Single-layer MoS2 transistors

2. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

3. Breakdown of High-Performance Monolayer MoS2 Transistors

4. Control of valley polarization in monolayer MoS2 by optical helicity

5. Valley polarization in MoS2 monolayers by optical pumping

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