Electronic and Chemical Properties of Donor, Acceptor Centers in Graphene-Reference-Cited by-同舟云学术

Electronic and Chemical Properties of Donor, Acceptor Centers in Graphene

Published:2015-08-18 Issue:9 Volume:9 Page:9180-9187
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Telychko Mykola¹²,Mutombo Pingo¹,Merino Pablo³,Hapala Prokop¹,Ondráček Martin¹,Bocquet François C.⁴⁵,Sforzini Jessica⁴⁵,Stetsovych Oleksandr¹,Vondráček Martin⁶,Jelínek Pavel¹,Švec Martin¹

Affiliation:

1. Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ 16200, Prague, Czech Republic

2. Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, Praha 8, Czech Republic

3. Max Planck Institute for Solid State Research, Heisenberg Strasse 1, 70569 Stuttgart, Germany

4. Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, 52425 Jülich, Germany

5. Jülich-Aachen Research Alliance (JARA); Fundamentals of Future Information Technology, 52425 Jülich, Germany

6. Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 10, CZ 18228, Prague, Czech Republic

Funder

Helmholtz Association

Ministerstva ?kolstv?, Ml?de?e A Telov?chovy

Czech Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b03690

Reference42 articles.

1. The rise of graphene

2. Graphene: Status and Prospects

3. Electric Field Effect in Atomically Thin Carbon Films

4. Wafer-Scale Graphene Integrated Circuit

5. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

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