Tuning Electronic Structure of Single Layer MoS2 through Defect and Interface Engineering-Reference-Cited by-同舟云学术

Tuning Electronic Structure of Single Layer MoS2 through Defect and Interface Engineering

Published:2018-02-03 Issue:3 Volume:12 Page:2569-2579
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Chen Yan^ORCID,Huang Shengxi¹,Ji Xiang,Adepalli Kiran^ORCID,Yin Kedi²,Ling Xi³,Wang Xinwei⁴^ORCID,Xue Jianmin²,Dresselhaus Mildred,Kong Jing^ORCID,Yildiz Bilge

Affiliation:

1. Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

2. State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China

3. Department of Chemistry, Division of Materials Science and Engineering, and The Photonics Center, Boston University, Boston, Massachusetts 02215, United States

4. School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China

Funder

Schlumberger Foundation

Basic Energy Sciences

International Atomic Energy Agency

Division of Electrical, Communications and Cyber Systems

National Natural Science Foundation of China

Central Committee of the Communist Party of China

Guangdong Province

Materials Research Institute, Pennsylvania State University

Publisher

American Chemical Society (ACS)