Photogating WS2 Photodetectors Using Embedded WSe2 Charge Puddles-Reference-Cited by-同舟云学术

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Photogating WS2 Photodetectors Using Embedded WSe2 Charge Puddles

Published:2020-04-09 Issue:4 Volume:14 Page:4559-4566
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Tsai Tsung-Han¹,Liang Zheng-Yong¹^ORCID,Lin Yung-Chang²^ORCID,Wang Cheng-Chieh¹,Lin Kuang-I³^ORCID,Suenaga Kazu²^ORCID,Chiu Po-Wen¹⁴^ORCID

Affiliation:

1. Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

2. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan

3. Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan

4. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c00098

Reference44 articles.

1. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

2. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

3. Cascaded emission of single photons from the biexciton in monolayered WSe2

4. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

5. Robust room temperature valley polarization in monolayer and bilayer WS2

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