Robust room temperature valley polarization in monolayer and bilayer WS2-Reference-Cited by-同舟云学术

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Robust room temperature valley polarization in monolayer and bilayer WS2

Published:2016 Issue:11 Volume:8 Page:6035-6042
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Nayak Pramoda K.¹²³⁴⁵,Lin Fan-Cheng⁶²³,Yeh Chao-Hui¹²³,Huang Jer-Shing⁶²³,Chiu Po-Wen¹²³

Affiliation:

1. Department of Electrical Engineering

2. National Tsing Hua University

3. Hsinchu 30013, Taiwan

4. Interdisciplinary School of Green Energy and Low Dimensional Carbon Materials Center

5. Ulsan National Institute of Science and Technology (UNIST)

6. Department of Chemistry

Abstract

Robust room temperature valley polarization in monolayer and bilayer WS₂ using excitation slightly smaller than the ground state excitation energy.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2016/NR/C5NR08395H

Reference36 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Valley polarization in MoS2 monolayers by optical pumping

3. Anomalously robust valley polarization and valley coherence in bilayer WS2

4. Valley and spin dynamics in MoSe2two-dimensional crystals

5. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

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