Interlayer Exciton Transport in MoSe2/WSe2 Heterostructures
Author:
Affiliation:
1. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki 305-0044, Japan
2. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Funder
University of Michigan
National Science Foundation
U.S. Department of Defense
JSPS KAKENHI
CREST, JST
Elemental Strategy Initiative conducted by the MEXT, Japan
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c08981
Reference50 articles.
1. Electrically Switchable Chiral Light-Emitting Transistor
2. Monolayer MoS2 Heterojunction Solar Cells
3. MoS 2 transistors with 1-nanometer gate lengths
4. Exciton transport in strained monolayer WSe2
5. Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures
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