Stable 1T Tungsten Disulfide Monolayer and Its Junctions: Growth and Atomic Structures-Reference-Cited by-同舟云学术

Stable 1T Tungsten Disulfide Monolayer and Its Junctions: Growth and Atomic Structures

Published:2018-12-07 Issue:12 Volume:12 Page:12080-12088
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lin Yung-Chang^ORCID,Yeh Chao-Hui¹^ORCID,Lin Ho-Chun²,Siao Ming-Deng¹,Liu Zheng³^ORCID,Nakajima Hideaki,Okazaki Toshiya,Chou Mei-Yin²,Suenaga Kazu⁴,Chiu Po-Wen¹²^ORCID

Affiliation:

1. Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

2. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan

3. Inorganic Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan

4. Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan

Funder

Academia Sinica

Ministry of Education, Culture, Sports, Science and Technology

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.8b04979

Reference39 articles.

1. Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers

2. Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating

3. Doping-controlled phase transitions in single-layer MoS2

4. Scalable van der Waals Heterojunctions for High-Performance Photodetectors

5. Phase engineering of transition metal dichalcogenides

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