Doping-controlled phase transitions in single-layer MoS2-Reference-Cited by-同舟云学术

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Doping-controlled phase transitions in single-layer MoS2

Published:2017-10-12 Issue:16 Volume:96 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Zhuang Houlong L.,Johannes Michelle D.,Singh Arunima K.,Hennig Richard G.

Funder

National Science Foundation

Cornell Center for Materials Research

Rensselaer Polytechnic Institute

U.S. Naval Research Laboratory

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.96.165305/fulltext

Reference49 articles.

1. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

2. Single-layer MoS2 transistors

3. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

4. Coherent Atomic and Electronic Heterostructures of Single-Layer MoS2

5. Enhanced Hydrogen Evolution Catalysis from Chemically Exfoliated Metallic MoS2 Nanosheets

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