Origin of the Flat Band in Heavily Cs-Doped Graphene-Reference-Cited by-同舟云学术

Origin of the Flat Band in Heavily Cs-Doped Graphene

Published:2019-12-11 Issue:1 Volume:14 Page:1055-1069
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Ehlen Niels¹^ORCID,Hell Martin¹,Marini Giovanni²,Hasdeo Eddwi Hesky³^ORCID,Saito Riichiro⁴,Falke Yannic¹,Goerbig Mark Oliver⁵,Di Santo Giovanni⁶^ORCID,Petaccia Luca⁶^ORCID,Profeta Gianni²^ORCID,Grüneis Alexander¹^ORCID

Affiliation:

1. II. Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, 50937 Cologne, Germany

2. Department of Physical and Chemical Sciences and SPIN-CNR, University of L’Aquila, Via Vetoio 10, I-67100 Coppito, Italy

3. Research Center for Physics, Indonesian Institute of Sciences, Kawasan Puspiptek Serpong, Tangerang Selatan, 15314, Indonesia

4. Department of Physics, Tohoku University, Sendai 980-8578, Japan

5. Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris-Saclay, 91405 Orsay Cedex, France

6. Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, 34149 Trieste, Italy

Funder

Deutscher Akademischer Austauschdienst

Deutsche Forschungsgemeinschaft

Japan Society for the Promotion of Science

H2020 Excellent Science

Quantum Matter and Materials

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b08622

Reference76 articles.

1. High-temperature surface superconductivity in topological flat-band systems

2. Artificial flat band systems: from lattice models to experiments

3. Localization of electronic wave functions due to local topology

4. Statistics of Kagome Lattice

5. Ferromagnetism in the Hubbard model on line graphs and further considerations

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