Three-Dimensional Fin-Structured Semiconducting Carbon Nanotube Network Transistor-Reference-Cited by-同舟云学术

Three-Dimensional Fin-Structured Semiconducting Carbon Nanotube Network Transistor

Published:2016-11-16 Issue:12 Volume:10 Page:10894-10900
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lee Dongil¹,Lee Byung-Hyun¹,Yoon Jinsu²,Ahn Dae-Chul¹,Park Jun-Young¹,Hur Jae¹,Kim Myung-Su¹,Jeon Seung-Bae¹,Kang Min-Ho³,Kim Kwanghee³,Lim Meehyun⁴,Choi Sung-Jin²,Choi Yang-Kyu¹

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea

2. School of Electrical Engineering, Kookmin University, 77 Jeongneung-ro, Seongbuk-gu, Seoul 02707, Korea

3. Department of Nano-process, National Nanofab Center (NNFC), Daejeon 34141, Korea

4. Test and Package Technology Group, Mechatronics R&D Center, Samsung Electronics, 1-1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b05429

Reference47 articles.

1. Silicon Device Scaling to the Sub-10-nm Regime

2. Less is Moore

3. The chips are down for Moore’s law

4. Nanowires in Nanoelectronics

5. Nanowire electronic and optoelectronic devices

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