Spatial Control of Dynamic p–i–n Junctions in Transition Metal Dichalcogenide Light-Emitting Devices-Reference-Cited by-同舟云学术

Spatial Control of Dynamic p–i–n Junctions in Transition Metal Dichalcogenide Light-Emitting Devices

Published:2021-07-26 Issue:8 Volume:15 Page:12911-12921
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Ou Hao¹,Matsuoka Hirofumi¹,Tempia Juliette¹,Yamada Tomoyuki¹,Takahashi Togo¹,Oi Koshi¹,Takaguchi Yuhei²,Endo Takahiko²,Miyata Yasumitsu²,Chen Chang-Hsiao³^ORCID,Li Lain-Jong⁴^ORCID,Pu Jiang¹^ORCID,Takenobu Taishi¹

Affiliation:

1. Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan

2. Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan

3. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan

4. Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong

Funder

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Ministry of Science and Technology, Taiwan

JSPS A3 Foresight Program

KONDO-ZAIDAN

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c01242

Reference44 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Emerging Photoluminescence in Monolayer MoS2

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Tightly bound trions in monolayer MoS2

5. Exciton Binding Energy and Nonhydrogenic Rydberg Series in MonolayerWS2

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