Enhanced Electroluminescence Quantum Efficiency via Tunable 2D Built‐In Electric Fields

Author:

Yang Yutian1,An Xuhong12,Yang Jiafu1,Fu Qiang1,Wei Zhiyong3,Ni Zhenhua14,Ma Liang1,Hu Zhenliang1,Lu Junpeng1ORCID

Affiliation:

1. Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing 211189 China

2. School of Education Jiangsu Open University Nanjing 211189 China

3. Jiangsu Key Laboratory for Design & Manufacture of Micro/Nano Biomedical Instruments and School of Mechanical Engineering Southeast University Nanjing 211189 China

4. Purple Mountain Laboratories Nanjing 211111 China

Abstract

AbstractThe built‐in electric field (BIEF) is of utmost importance for 2D optoelectronic devices, which are typically realized in heterostructures created through interfacial engineering. However, the limitations of the sharp field distribution, inevitable energy band discontinuity, and inflexible construction of 2D heterostructures restrict their application. In this work, a large‐scale, continuous, and controllable BIEF using monolayer WxMo1−xS2 alloys with tunable composition gradients is constructed. Density functional simulations demonstrate that a BIEF can be formed within the whole alloy due to the charge distribution resulting from the composition gradients. Accordingly, a monolayer WxMo1−xS2 alloy with a controllable composition gradient via two‐step chemical vapor deposition and confirmed the continuous tunability of the band structure and the variation in the composition gradient within the alloy is synthesized. Using the BIEF, 2D light‐emitting diodes (LEDs) based on WxMo1−xS2 alloys and achieve strong electroluminescence emission are constructed. A large BIEF facilitates charge carrier migration and recombination, and the external quantum efficiency (over 0.62%) is more than 5 times that of small BIEF LEDs. The study not only provides a novel approach for the on‐demand design of a BIEF but also provides an opportunity for potential applications in optoelectronic devices.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Jiangsu Provincial Department of Science and Technology

Publisher

Wiley

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