Controlling Polarity of MoTe2 Transistors for Monolithic Complementary Logic via Schottky Contact Engineering-Reference-Cited by-同舟云学术

Controlling Polarity of MoTe2 Transistors for Monolithic Complementary Logic via Schottky Contact Engineering

Published:2020-01-07 Issue:2 Volume:14 Page:1457-1467
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Liu Xia¹^ORCID,Islam Arnob¹^ORCID,Guo Jing²,Feng Philip X.-L.¹²^ORCID

Affiliation:

1. Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106, United States

2. Electrical & Computer Engineering, University of Florida, Gainesville, Florida 32611, United States

Funder

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b05502

Reference52 articles.

1. 2D materials and van der Waals heterostructures

2. Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials

3. Recent Advances in Two-Dimensional Materials beyond Graphene

4. Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers

5. Bandgap opening in few-layered monoclinic MoTe2

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