Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio
Author:
Affiliation:
1. Division of Quantum Phases & Devices, Department of Physics, Konkuk University, Seoul 143-701, Korea
2. Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747, Korea
Funder
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b02616
Reference33 articles.
1. A roadmap for graphene
2. Graphene nanoribbon devices at high bias
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4. Device Configurations for Ambipolar Transport in Flexible, Pentacene Transistors
5. General observation of n-type field-effect behaviour in organic semiconductors
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