Biexciton Emission from Edges and Grain Boundaries of Triangular WS2 Monolayers-Reference-Cited by-同舟云学术

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Biexciton Emission from Edges and Grain Boundaries of Triangular WS2 Monolayers

Published:2016-01-15 Issue:2 Volume:10 Page:2399-2405
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Kim Min Su¹,Yun Seok Joon¹²,Lee Yongjun¹²,Seo Changwon¹²,Han Gang Hee¹,Kim Ki Kang³,Lee Young Hee¹²,Kim Jeongyong¹²

Affiliation:

1. Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Republic of Korea

2. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea

3. Department of Energy and Materials Engineering, Dongguk University-Seoul, Seoul 100-715, Republic of Korea

Funder

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b07214

Reference30 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Emerging Photoluminescence in Monolayer MoS2

3. Exciton dynamics and annihilation in WS2 2D semiconductors

4. Efficient Exciton-Plasmon Conversion in Ag Nanowire/Monolayer MoS2Hybrids: Direct Imaging and Quantitative Estimation of Plasmon Coupling and Propagation

5. Synthesis and Optical Properties of Large-Area Single-Crystalline 2D Semiconductor WS2Monolayer from Chemical Vapor Deposition

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1. Gas pressure-sensitive regulation of exciton state of monolayer tungsten disulfide;Frontiers of Chemical Science and Engineering;2024-08-15

2. The super raman intensity induced by spin-orbit coupling effect in monolayer MoS2 and WS2 under varying pressures;Materials Today Physics;2024-08

3. Influence of Edges and Interlayer Electron–phonon Coupling in WS₂/h-BN Heterostructure;ACS Applied Materials & Interfaces;2024-07-22

4. Distinct Valley Polarization in Vertical Heterobilayers: Difference between Edge- and Center-Nucleated WS₂/MoS₂;ACS Applied Materials & Interfaces;2024-07-17

5. Strain-engineered rippling at the bilayer-MoS2 interface identified by advanced atomic force microscopy;Frontiers of Physics;2024-05-27

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