Strain-Gated Field Effect Transistor of a MoS2–ZnO 2D–1D Hybrid Structure
Author:
Affiliation:
1. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
2. School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
Funder
National Natural Science Foundation of China
Thousands Talents Program for Pioneer Researcher and his Innovation Team
Beijing City Committee of Science and Technology
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b07121
Reference31 articles.
1. Single-layer MoS2 transistors
2. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
4. Single-Layer MoS2 Phototransistors
5. Ultrasensitive photodetectors based on monolayer MoS2
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