Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3-Reference-Cited by-同舟云学术

Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3

Published:2018-06-06 Issue:6 Volume:12 Page:6310-6318
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Walsh Lee A.¹²^ORCID,Green Avery J.³,Addou Rafik¹^ORCID,Nolting Westly³^ORCID,Cormier Christopher R.¹,Barton Adam T.¹,Mowll Tyler R.³,Yue Ruoyu¹,Lu Ning¹,Kim Jiyoung¹^ORCID,Kim Moon J.¹,LaBella Vincent P.³,Ventrice Carl A.³,McDonnell Stephen⁴,Vandenberghe William G.¹,Wallace Robert M.¹^ORCID,Diebold Alain³,Hinkle Christopher L.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States

2. Tyndall National Institute, University College Cork, Lee Maltings Complex, Cork T12R5CP, Ireland

3. Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, United States

4. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States

Funder

National Institute of Standards and Technology

Science Foundation Ireland

H2020 Marie Sklodowska-Curie Actions

Semiconductor Research Corporation

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.8b03414

Reference44 articles.

1. Colloquium: Topological insulators

2. The birth of topological insulators

3. Spin-transfer torque generated by a topological insulator

4. Imperfect two-dimensional topological insulator field-effect transistors

5. Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit

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