From monolayer to thin films: engineered bandgap in CVD grown Bi2Se(3−x)Sx topological insulator alloys

Author:

Poplinger Michal12,Kaltsas Dimitris3ORCID,Stern Chen12,Nanikashvili Pilkhaz12,Levi Adi12,Yadav Rajesh K.12,Nandi Sukanta12,Wu Yuxiao24ORCID,Patsha Avinash5ORCID,Ismach Ariel5ORCID,Ramasubramaniam Ashwin67,Pesquera Amaia8,Zurutuza Amaia8,Zergioti Ioanna3,Tsetseris Leonidas3ORCID,Lewi Tomer12,Naveh Doron12ORCID

Affiliation:

1. Faculty of Engineering, Bar-Ilan University, Ramat-Gan 52900, Israel

2. Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel

3. Department of Physics, School of Applied Mathematical and Physical Sciences, National Technical University of Athens, Athens, Greece

4. Department of Physics, Faculty of Exact Sciences, Bar-Ilan University, Ramat-Gan 52900, Israel

5. Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel

6. Department of Mechanical and Industrial Engineering, University of Massachusetts, Amherst, USA

7. Materials Science and Engineering Graduate Program, University of Massachusetts, Amherst, USA

8. Graphenea Headquarters, Spain

Abstract

CVD enabled scalable growth of topological insulator alloys Bi2Se(3−x)Sx with a composition-tunable bandgap, free from surface-state pinning.

Funder

Horizon 2020 Framework Programme

Israel Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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