Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields-Reference-Cited by-同舟云学术

Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields

Published:2018-06-28 Issue:7 Volume:12 Page:7109-7116
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Pak Jinsu¹,Jang Yeonsik¹,Byun Junghwan²,Cho Kyungjune¹,Kim Tae-Young¹,Kim Jae-Keun¹,Choi Barbara Yuri¹,Shin Jiwon¹,Hong Yongtaek²,Chung Seungjun³,Lee Takhee¹^ORCID

Affiliation:

1. Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea

2. Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Korea

3. Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea

Funder

National Research Council of Science and Technology

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Korea Institute of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.8b02925