Study of Growth Mechanism and Properties of Zinc Indium Sulfide Thin Films Deposited by Atomic Layer Chemical Vapor Deposition over the Entire Range of Composition-Reference-Cited by-同舟云学术

Study of Growth Mechanism and Properties of Zinc Indium Sulfide Thin Films Deposited by Atomic Layer Chemical Vapor Deposition over the Entire Range of Composition

Published:2011-08-09 Issue:34 Volume:115 Page:17197-17205
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Genevée Pascal¹,Donsanti Frédérique¹,Renou Gilles¹,Lincot Daniel¹

Affiliation:

1. Institut de Recherche et Développement sur l’Energie Photovoltaïque (IRDEP), UMR 7174 EDF−CNRS−Chimie ParisTech, 6, Quai Watier, 78401, Chatou, France

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp203604j

Reference26 articles.

1. Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)2 based thin film photovoltaics: present status and current developments

2. Indium sulfide and relatives in the world of photovoltaics

3. Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se2 based thin film solar cells: Band alignment and sulfur gradient

4. New Cd-free buffer layer deposited by PVD: In2S3 containing Na compounds

5. Structural, optical and electrical properties of β-In2S3-3xO3x thin films obtained by PVD

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