A review on atomic layer deposited buffer layers for Cu(In,Ga)Se2 (CIGS) thin film solar cells: Past, present, and future

Author:

Sinha SoumyadeepORCID,Nandi Dip K.,Pawar Pravin S.ORCID,Kim Soo-Hyun,Heo JaeyeongORCID

Funder

National Research Foundation of Korea

Korea government

Ministry of Trade, Industry & Energy

KSRC

Publisher

Elsevier BV

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference154 articles.

1. Microstructural and chemical studies of interfaces between Cu(In,Ga)Se2 and In2S3 layers;Abou-Ras;J. Appl. Phys.,2005

2. Band gap engineering of atomic layer deposited ZnxSn1-xO buffer for efficient Cu(In, Ga)Se2 solar cell;Agbenyeke;Prog. Photovolt: Res. Appl.,2018

3. An investigation into the effects of band gap and doping concentration on Cu(In,Ga)Se2 solar cell efficiency;Asaduzzaman;SpringerPlus,2016

4. Nanoengineering and interfacial engineering of photovoltaics by atomic layer deposition;Bakke;Nanoscale,2011

5. Textured ZnO thin films for solar cells grown by a two-step process with the atomic layer deposition technique;Baosheng;Jpn. J. Appl. Phys.,1998

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