Nanoscale Tunnel Junctions and Metallic Single-Electron Transistors via Shadow Evaporation and In Situ Atomic Layer Deposition of Tunnel Barriers-Reference-Cited by-同舟云学术

Nanoscale Tunnel Junctions and Metallic Single-Electron Transistors via Shadow Evaporation and In Situ Atomic Layer Deposition of Tunnel Barriers

Published:2021-02-12 Issue:2 Volume:4 Page:1401-1410
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Shimada Hiroshi¹^ORCID,Koike Takehiro¹,Kikkawa Keisuke¹,Konno Hiroki¹,Ito Naoki¹,Kobayashi Ryusuke¹,Mizugaki Yoshinao¹,Kanomata Kensaku²,Miura Masanori²,Hirose Fumihiko²

Affiliation:

1. Department of Engineering Science, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan

2. Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510, Japan

Funder

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c02937

Reference69 articles.

1. Single Charge Tunneling

2. Coherent control of macroscopic quantum states in a single-Cooper-pair box

3. Superconducting Qubits: Current State of Play

4. Noise performance of the radio-frequency single-electron transistor

5. Electrical metrology with single electrons

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1. Scalability of supercurrent modulable with single Cooper-pair transistors connected in parallel;Japanese Journal of Applied Physics;2021-06-24

2. Nanoscale Tunnel Junctions and Metallic Single-Electron Transistors via Shadow Evaporation and In Situ Atomic Layer Deposition of Tunnel Barriers;ACS Applied Nano Materials;2021-02-12