Rapid, General-Purpose Patterning of Silicon Nitride Thin Films Under Ambient Conditions for Applications Including Fluid Channel and SERS Substrate Formation-Reference-Cited by-同舟云学术

Rapid, General-Purpose Patterning of Silicon Nitride Thin Films Under Ambient Conditions for Applications Including Fluid Channel and SERS Substrate Formation

Published:2020-03-04 Issue:3 Volume:3 Page:2969-2977
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Sheetz Brian S.¹,Bandara Y.M. Nuwan D.Y.¹^ORCID,Rickson Benjamin¹,Auten Michael¹,Dwyer Jason R.¹^ORCID

Affiliation:

1. Department of Chemistry, University of Rhode Island, 140 Flagg Road, Kingston, Rhode Island 02881, United States

Funder

Division of Chemistry

Office of Experimental Program to Stimulate Competitive Research

Division of Chemical, Bioengineering, Environmental, and Transport Systems

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c00248

Reference33 articles.

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2. Preparation and properties of clean Si3N4 surfaces

3. Formation of Primary Amines on Silicon Nitride Surfaces: a Direct, Plasma-Based Pathway to Functionalization

4. Etch rates for micromachining processing

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