Monolayer MoS2/WO3 Heterostructures with Sulfur Anion Reservoirs as Electronic Synapses for Neuromorphic Computing-Reference-Cited by-同舟云学术

Monolayer MoS2/WO3 Heterostructures with Sulfur Anion Reservoirs as Electronic Synapses for Neuromorphic Computing

Published:2021-01-27 Issue:2 Volume:4 Page:1766-1775
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Hao Song¹,Ji Xinglong¹,Liu Faqiang²,Zhong Shuai¹,Pang Khin Yin¹,Lim Kian Guan¹,Chong Tow Chong¹,Zhao Rong¹²^ORCID

Affiliation:

1. Department of Engineering Product Design, Singapore University of Technology and Design, 8 Somapah Road, 487372, Singapore

2. Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing 100084, China

Funder

Singapore University of Technology and Design

Ministry of Education - Singapore

Temasek Lab Seed Research Program

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c03205

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5. Truly Concomitant and Independently Expressed Short‐ and Long‐Term Plasticity in a Bi 2 O 2 Se‐Based Three‐Terminal Memristor

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