Nanolayered Graphene/Hexagonal Boron Nitride/n-AlGaN Heterostructures as Solar-Blind Deep-Ultraviolet Photodetectors
Author:
Affiliation:
1. Department of Physics, National Taiwan University, Taipei 10617, Taiwan
Funder
Ministry of Education
Ministry of Science and Technology, Taiwan
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c01219
Reference66 articles.
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4. Omnès, F.; Monroy, E.; Muñoz, E.; Reverchon, J. L., Wide Bandgap UV Photodetectors : A Short Review of Devices and Applications. In Gallium Nitride Materials and Devices II, Proceedings of Integrated Optoelectronic Devices, San Jose, California, the United States of America, 2007; Morkoc, H., Litton, C. W., Eds. SPIE Press: Bellingham, Washington, the United States of America, 2007.
5. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
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