Ferroresistive Diode Currents in Nanometer-Thick Cobalt-Doped BiFeO3 Films for Memory Applications
Author:
Affiliation:
1. Shandong Provincial Key Lab. of Preparation and Measurement of Building Materials, University of Jinan, Jinan, 250022, China
2. School of Materials Science and Engineering, University of Jinan, Jinan, 250022, China
Funder
Shandong Province
Taishan Scholar Project of Shandong Province
National Natural Science Foundation of China
Natural Science Foundation of Shandong Province
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c01649
Reference60 articles.
1. Ferroelectric Memories
2. Ferroelectric Schottky Diode
3. Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO 3
4. Ferroelectric Schottky diode behavior from aSrRuO3-Pb(Zr0.2Ti0.8)O3-Tastructure
5. Ferroelectric polarization-leakage current relation in high quality epitaxialPb(Zr,Ti)O3films
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