Chemical Vapor Deposition of MoS2 for Energy Harvesting: Evolution of the Interfacial Oxide Layer-Reference-Cited by-同舟云学术

Chemical Vapor Deposition of MoS2 for Energy Harvesting: Evolution of the Interfacial Oxide Layer

Published:2020-06-10 Issue:7 Volume:3 Page:6563-6573
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Verhagen Tim¹,Rodriguez Alvaro²,Vondráček Martin³,Honolka Jan³,Funke Sebastian⁴,Zlámalová Magda²⁵,Kavan Ladislav²^ORCID,Kalbac Martin²^ORCID,Vejpravova Jana¹^ORCID,Frank Otakar²^ORCID

Affiliation:

1. Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague 2, Czech Republic

2. J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague, Czech Republic

3. Institute of Physics, Czech Academy of Sciences, Na Slovance 1999/2, 182 21 Prague 8, Czech Republic

4. Accurion GmbH, Stresemannstraße 30, Gottingen 37079, Germany

5. Department of Inorganic Chemistry, Faculty of Science, Charles University, Hlavova 2030/8, 128 43 Prague 2, Czech Republic

Funder

Ministerstvo ?kolstv?, Ml?de?e a Telov?chovy

Grantov? Agentura Cesk? Republiky

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c01028

Reference69 articles.

1. Band alignment at interfaces of few-monolayer MoS2 with SiO2 and HfO2

2. Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment

3. Mixed-dimensional van der Waals heterostructures

4. Pinning of graphene to Ir(111) by flat Ir dots

5. Chemically Resolved Interface Structure of Epitaxial Graphene on SiC(0001)

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