Edge-Controlled Growth and Etching of Two-Dimensional GaSe Monolayers-Reference-Cited by-同舟云学术

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Edge-Controlled Growth and Etching of Two-Dimensional GaSe Monolayers

Published:2016-12-20 Issue:1 Volume:139 Page:482-491
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Li Xufan¹,Dong Jichen²,Idrobo Juan C.¹,Puretzky Alexander A.¹,Rouleau Christopher M.¹,Geohegan David B.¹,Ding Feng²³,Xiao Kai¹^ORCID

Affiliation:

1. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

2. Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 689-798, Republic of Korea

3. School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea

Funder

Basic Energy Sciences

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/jacs.6b11076

Reference43 articles.

1. The rise of graphene

2. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

3. Ultrasensitive photodetectors based on monolayer MoS2

4. Monolayer semiconductor nanocavity lasers with ultralow thresholds

5. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

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