High Vertical Carrier Mobilities of Organic Semiconductors Due to a Deposited Laid-Down Herringbone Structure Induced by a Reduced Graphene Oxide Template-Reference-Cited by-同舟云学术

High Vertical Carrier Mobilities of Organic Semiconductors Due to a Deposited Laid-Down Herringbone Structure Induced by a Reduced Graphene Oxide Template

Published:2020-02-04 Issue:8 Volume:12 Page:9489-9497
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yamada Keitaro¹,Suzuki Mitsuharu¹,Suenobu Tomoyoshi¹^ORCID,Nakayama Ken-ichi¹^ORCID

Affiliation:

1. Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b18993

Reference54 articles.

1. Towards high charge-carrier mobilities by rational design of the shape and periphery of discotics

2. Bulky End‐Capped [1]Benzothieno[3,2‐ b ]benzothiophenes: Reaching High‐Mobility Organic Semiconductors by Fine Tuning of the Crystalline Solid‐State Order

3. Liquid crystals for organic thin-film transistors

4. Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method

5. High Carrier Mobility up to 1.4 cm2·V-1·s-1in Non-Peripheral Octahexyl Phthalocyanine

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