Performance Improvement with an Ultrathin p-Type Interfacial Layer in n-Type Vertical Organic Field-Effect Transistors Based on Reduced Graphene Oxide Electrode
Author:
Affiliation:
1. Division of Applied Chemistry, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
2. Division of Applied Chemistry, School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Funder
Japan Society for the Promotion of Science
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acsomega.2c02085
Reference36 articles.
1. Graphene as an electrode for solution-processed electron-transporting organic transistors
2. Chemical and Biomolecule Sensing with Organic Field-Effect Transistors
3. Percolation-Limited Dual Charge Transport in Vertical p–n Heterojunction Schottky Barrier Transistors
4. Vertical Organic Field‐Effect Transistors
5. Challenges and Emerging Opportunities in High‐Mobility and Low‐Energy‐Consumption Organic Field‐Effect Transistors
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Low-temperature vapor reduction of graphene oxide electrodes for vertical organic field-effect transistors;Journal of Materials Chemistry C;2024
2. Correction to “Performance Improvement with an Ultrathin p-Type Interfacial Layer in n-Type Vertical Organic Field-Effect Transistors Based on Reduced Graphene Oxide Electrode”;ACS Omega;2023-12-11
3. Overcoming Downscaling Limitations in Organic Semiconductors: Strategies and Progress;Small;2023-10-19
4. C60-Modified Reduced-Graphene-Oxide-Based p-Type Vertical Organic Field-Effect Transistors for Future Complementary Circuits;ACS Applied Nano Materials;2023-09-22
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