Substrate Bias Voltage Tailoring the Interfacial Chemistry of a-SiCx:H: A Surprising Improvement in Adhesion of a-C:H Thin Films Deposited on Ferrous Alloys Controlled by Oxygen
Author:
Affiliation:
1. PPGMAT, Universidade de Caxias do Sul, 95070-560 Caxias do Sul, RS, Brazil
2. Instituto de Física “Gleb Wataghin”, Universidade Estadual de Campinas, 13083-970 Campinas, SP, Brazil
3. Plasmar Tecnologia Ltda., 95030-775 Caxias do Sul, RS, Brazil
Funder
Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico
Plasmar Tecnologia Ltda
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.9b03597
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