Improved Performance of CH3NH3PbI3–xClx Resistive Switching Memory by Assembling 2D/3D Perovskite Heterostructures-Reference-Cited by-同舟云学术

Improved Performance of CH3NH3PbI3–xClx Resistive Switching Memory by Assembling 2D/3D Perovskite Heterostructures

Published:2020-03-09 Issue:13 Volume:12 Page:15439-15445
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Xia Fei¹,Xu Ying¹,Li Bixin¹²,Hui Wei¹,Zhang Shiyang²,Zhu Lin¹,Xia Yingdong¹^ORCID,Chen Yonghua¹^ORCID,Huang Wei¹³⁴

Affiliation:

1. Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China

2. Department of Science Education, Laboratory of College Physics, Hunan First Normal University, 1015 Fenglin Third Road, Changsha 410205, China

3. Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi’an 710072, China

4. Key Laboratory for Organic Electronics and Information Displays (KLOEID), & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China

Funder

Ministry of Science and Technology of the People's Republic of China

Government of Jiangsu Province

National Natural Science Foundation of China

Recruitment Program of Global Experts

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b22732

Reference53 articles.