Sn-Doping Enhanced Ultrahigh Mobility In1–xSnxSe Phototransistor-Reference-Cited by-同舟云学术

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Sn-Doping Enhanced Ultrahigh Mobility In1–xSnxSe Phototransistor

Published:2019-06-17 Issue:27 Volume:11 Page:24269-24278
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Paul Inbaraj Christy Roshini¹^ORCID,Gudelli Vijay Kumar²,Mathew Roshan Jesus¹³^ORCID,Ulaganathan Rajesh Kumar^ORCID,Sankar Raman^ORCID,Lin Hsia Yu,Lin Hung-I^ORCID,Liao Yu-Ming^ORCID,Cheng Hao-Yu,Lin Kung-Hsuan^ORCID,Chou Fang Cheng,Chen Yit-Tsong³^ORCID,Lee Chih-Hao¹,Guo Guang-Yu²,Chen Yang-Fang

Affiliation:

1. Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan

2. Physics Division, National Center for Theoretical Sciences, Hsinchu 30013, Taiwan

3. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan

Funder

Institute of Physics

Ministry of Education

Academia Sinica

National Tsing Hua University

Ministry of Science and Technology, Taiwan

Taiwan Internal Graduate Program

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b06433

Reference56 articles.

1. Roll-to-roll production of 30-inch graphene films for transparent electrodes

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Two-dimensional gas of massless Dirac fermions in graphene

4. Photocurrent generation with two-dimensional van der Waals semiconductors

5. Photodetectors Based on Two-Dimensional Layered Materials Beyond Graphene

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