Coupling between Pyroelectricity and Built-In Electric Field Enabled Highly Sensitive Infrared Phototransistor Based on InSe/WSe<sub>2</sub>/P(VDF-TrFE) Heterostructure-Reference-Cited by-同舟云学术

Coupling between Pyroelectricity and Built-In Electric Field Enabled Highly Sensitive Infrared Phototransistor Based on InSe/WSe₂/P(VDF-TrFE) Heterostructure

Published:2023-04-07 Issue:15 Volume:15 Page:19121-19128
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Paul Inbaraj Christy Roshini¹^ORCID,Mathew Roshan Jesus²³^ORCID,Sankar Raman⁴^ORCID,Lin Hsia Yu¹^ORCID,Li Nian-Xiu¹,Chen Yit-Tsong²³⁵^ORCID,Chen Yang-Fang¹⁶^ORCID

Affiliation:

1. Department of Physics, National Taiwan University, Taipei 10617, Taiwan

2. Department of Chemistry, National Taiwan University, Taipei 10617, Taiwan

3. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan

4. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan

5. Department of Electrophysics, PSMC-NYCU Research Center, and LIGHTMED Laser System Research Center, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan

6. Advanced Research Centre for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan

Funder

Ministry of Education

Ministry of Science and Technology, Taiwan

National Science and Technology Council, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c22876

Reference39 articles.