Oxygen-Induced In Situ Manipulation of the Interlayer Coupling and Exciton Recombination in Bi2Se3/MoS2 2D Heterostructures-Reference-Cited by-同舟云学术

Oxygen-Induced In Situ Manipulation of the Interlayer Coupling and Exciton Recombination in Bi2Se3/MoS2 2D Heterostructures

Published:2019-04-08 Issue:17 Volume:11 Page:15913-15921
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hennighausen Zachariah^ORCID,Lane Christopher^ORCID,Benabbas Abdelkrim,Mendez Kevin,Eggenberger Monika,Champion Paul M.,Robinson Jeremy T.¹^ORCID,Bansil Arun,Kar Swastik

Affiliation:

1. Naval Research Laboratory, Washington, District of Columbia 20375, United States

Funder

U.S. Department of Veterans Affairs

Division of Electrical, Communications and Cyber Systems

Division of Chemistry

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b02929

Reference70 articles.

1. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

2. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

3. Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films

4. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

5. Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi 2 Se 3 and MoS 2 atomic layers

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