Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi 2 Se 3 and MoS 2 atomic layers-Reference-Cited by-同舟云学术

Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi 2 Se 3 and MoS 2 atomic layers

Published:2017-07-07 Issue:7 Volume:3 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Vargas Anthony¹,Liu Fangze¹²^ORCID,Lane Christopher¹,Rubin Daniel¹,Bilgin Ismail¹,Hennighausen Zachariah¹,DeCapua Matthew¹,Bansil Arun¹,Kar Swastik¹³

Affiliation:

1. Department of Physics, Northeastern University, Boston, MA 02115, USA.

2. Materials Synthesis and Integrated Devices Group (MPA-11), Los Alamos National Laboratory, Los Alamos, NM 87545, USA.

3. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, PR China.

Abstract

Heterocrystals: rotationally oriented stacks of incommensurate 2D materials with tunable and laser-reconfigurable properties.

Funder

Directorate for Engineering

Office of Science

Northeastern University

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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4. Valley-polarized exciton dynamics in a 2D semiconductor heterostructure

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