Highly Robust Organometallic Small-Molecule-Based Nonvolatile Resistive Memory Controlled by a Redox-Gated Switching Mechanism-Reference-Cited by-同舟云学术

Highly Robust Organometallic Small-Molecule-Based Nonvolatile Resistive Memory Controlled by a Redox-Gated Switching Mechanism

Published:2019-10-14 Issue:43 Volume:11 Page:40332-40338
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Yang¹²³^ORCID,Zhu Xiaolin¹,Li Yujia¹,Zhang Mayue¹,Ma Chunlan¹,Li Hua²^ORCID,Lu Jianmei²^ORCID,Zhang Qichun³^ORCID

Affiliation:

1. Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, P. R. China

2. College of Chemistry, Chemical Engineering, and Materials Science, Soochow University, Suzhou 215123, P. R. China

3. School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore

Funder

Ministry of Education - Singapore

Natural Science Foundation of Jiangsu Province

Government of Jiangsu Province

National Natural Science Foundation of China

Natural Science Foundation of the Jiangsu Higher Education Institutions

National Excellent Doctoral Dissertation funds of China

Jiangsu Key Disciplines of the Thirteenth Five-Year Plan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b13401

Reference48 articles.

1. Organic and hybrid resistive switching materials and devices

2. Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

3. Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory

4. An All-Organic Composite System for Resistive Change Memory via the Self-Assembly of Plastic-Crystalline Molecules

5. Unveiling the Switching Riddle of Silver Tetracyanoquinodimethane Towards Novel Planar Single-Crystalline Electrochemical Metallization Memories

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