Enhanced Performance of a CVD MoS2 Photodetector by Chemical in Situ n-Type Doping-Reference-Cited by-同舟云学术

Enhanced Performance of a CVD MoS2 Photodetector by Chemical in Situ n-Type Doping

Published:2019-03-06 Issue:12 Volume:11 Page:11636-11644
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Songyu¹^ORCID,Chen Xiaoqing,Liu Famin¹,Chen Yongfeng,Liu Beiyun,Deng Wenjie,An Boxing,Chu Feihong,Zhang Guoqing,Li Shanlin,Li Xuhong¹,Zhang Yongzhe^ORCID

Affiliation:

1. School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China

Funder

Beijing Nova Program

National Natural Science Foundation of China

Beijing Municipal Commission of Education

Natural Science Foundation of Beijing Municipality

Equipment Pre-research Project of China Electronics Technology Group Corporation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b00856

Reference65 articles.

1. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

2. Two-dimensional material nanophotonics

3. Photodetectors Based on Two-Dimensional Layered Materials Beyond Graphene

4. Monolayer Transition Metal Dichalcogenides as Light Sources

5. Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor

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