Extrapolated Defect Transition Level in Two-Dimensional Materials: The Case of Charged Native Point Defects in Monolayer Hexagonal Boron Nitride-Reference-Cited by-同舟云学术

Extrapolated Defect Transition Level in Two-Dimensional Materials: The Case of Charged Native Point Defects in Monolayer Hexagonal Boron Nitride

Published:2020-03-13 Issue:14 Volume:12 Page:17055-17061
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Liu Xuefei¹²³,Gao Zhibin⁴^ORCID,Wang Vei⁵^ORCID,Luo Zijiang²⁶,Lv Bing³,Ding Zhao¹²,Zhang Zhaofu⁷^ORCID

Affiliation:

1. College of Big data and Information Engineering, Guizhou University, Guiyang 550025, China

2. Semiconductor Power Device Reliability Engineering Center of Ministry of Education, Guiyang 550025, China

3. Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China

4. Department of Physics, National University of Singapore, Singapore 117551, Republic of Singapore

5. Department of Applied Physics, Xi’an University of Technology, Xi’an 710054, China

6. College of Information, Guizhou Finance and Economics University, Guiyang 550025, China

7. Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, United Kingdom

Funder

Guizhou Normal University

Faculty of Science, National University of Singapore

National Natural Science Foundation of China

Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University

Guizhou Province

Education Bureau of Shanxi Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b23431

Reference45 articles.

1. Engineering two-dimensional electronics by semiconductor defects

2. Defects in Semiconductors: Some Fatal, Some Vital

3. First-principles engineering of charged defects for two-dimensional quantum technologies

4. Enhancement of Out-of-Plane Charge Transport in a Vertically Stacked Two-Dimensional Heterostructure Using Point Defects

5. The role of defects and excess surface charges at finite temperature for optimizing oxide photoabsorbers

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic structure and magnetic properties of CrI3 monolayer doped by rare earth metal atoms;Journal of Physics and Chemistry of Solids;2024-04

2. First-Principles Studies on Ultrafast Ionic Transport through van der Waals Solid Electrolytes of YX₃ (X = Cl, Br, I) with Quasi-One-Dimensional Atomic Pore Channels;The Journal of Physical Chemistry C;2023-12-12

3. Lessons Learned from Catalysis to Qubits: General Strategies to Build Accessible and Accurate First-Principles Models of Point Defects;The Journal of Physical Chemistry C;2023-11-08

4. Charge transfer due to defects in hexagonal boron nitride/graphene heterostructures: An ab initio study;Physical Review Materials;2023-09-12

5. Understanding the hydrogen evolution reaction activity of doped single-atom catalysts on two-dimensional GaPS4 by DFT and machine learning;Journal of Energy Chemistry;2023-06